D.I. Tetelbaum, O.N. Gorshkov, S.A. Trushin, D.G. Revin, D.M. Gaponova, W. Eckstein. The enhancement of luminescence in ion implanted Si quantum dots in SiO2 matrix by means of dose alignment and doping.Nanotechnology. 2000. V.11. P.295-297.
D.I. Tetelbaum, S.A. Trushin, Z.F. Krasil’nik, D.M. Gaponova, A.N. Mikhailov. Luminescence of silicon nanostructured by irradiation with heavy ions. Optical Materials. 2001. V.17. No.1-2. P.57-59.
D.I. Tetelbaum, S.A. Trushin, V.A. Burdov, A.I. Golovanov, D.G. Revin, D.M. Gaponova. The influence of phosphorus and hydrogen ion implantation on the photoluminescence of SiO2 with Si nanoinclusions. Nucl.Instr.Meth.B. 2001. V.174. P.123-129.
D.I. Tetelbaum, V.A. Burdov, S.A. Trushin, A.N. Mikhaylov, D.G. Revin, D.M. Gaponova. The influence of annealing temperature and doping on the red/near-infrared luminescence of ion implanted SiO2:nc-Si.Proceeding of 201 MRS Fall Meeting. 2001. V.692. P.H10.8.
D.I. Tetelbaum, V.A. Burdov, A.N. Mikhaylov and S.A. Trushin. About the "phosphorus" sensitization of silicon quantum dots in SiO2 photoluminescence. Proceedings of 10-th International Symposium “Nanostructures: Physics and Technology” (17-21 June 2002, St. Petersburg, Russia). P.206-209.
S.A. Trushin, A.N. Mikhailov, D.I. Tetelbaum, O.N. Gorshkov, D.G. Revin, D.M. Gaponova. The optimization of photoluminescence properties of ion-implantation-produced nanostructures on the base of Si inclusions in SiO2 matrix. Surface and Coating Technology. 2002. V.158-159. P.717-719.
D.I. Tetelbaum, E.S. Demidov, A.N. Mikhaylov, S.A. Trushin, D.M. Gaponova, G.A. Kachurin, S.G. Yanovskaya, A.I. Kovalev, D.L. Wainstein. The properties of the phosphorus- and boron-doped SiO2:Si nanostructures. Proceedings of 5th ISTC (International Science and Technology Center) Seminar "Nanotechnologies in the area of physics, chemistry and biotechnology" (May 27-29, 2002, Saint-Petersburg, Russia). P.108-113.
D.I. Tetelbaum, S.A. Trushin, A.N. Mikhaylov, V.K. Vasil'ev, G.A. Kachurin, S.G. Yanovskaya, D.M. Gaponova. The influence of the annealing conditions on the photoluminescence of ion-implanted SiO2:Si nanosystem at additional phosphorus implantation. Physica E. Low-dimensional Systems and Nanostructures. 2003. V.16. No.3-4. P.410-413.
D.I. Tetelbaum, A.A. Ezhevskii, S.A. Trushin, A.N. Mikhaylov, A.Yu. Azov, A.K. Mukhamatullin, S.E. Akis, D.M. Gaponova. The room temperature photoluminescence of Si nanocrystals in a-Si matrix composite system produced by the irradiation of silicon with ions of high and medium masses. Material Science and Engineering B. 2003. V.101. No.1-3. P.279-282.
Г.А. Качурин, С.Г. Яновская, Д.И. Тетельбаум, А.Н. Михайлов. Влияние имплантации ионов P на фотолюминесценцию нанокристаллов Si в слоях SiO2. ФТП. 2003. Т.37. В. 6. С. 738-742.
D.I. Tetelbaum, S.A. Trushin, A.N. Mikhaylov, A.K. Mukhamatullin, D.M. Gaponova. The formation of Si nanocrystals and modification of their properties by the ion-beam procedures. Proceedings of 8th Japan-Russia International Symposium on Interaction of Fast Charged Particles with Solids (November 24-30, 2002, Kyoto University, Japan). 2003. P.167-171.
D.I. Tetelbaum, O.N. Gorshkov, S.A. Trushin, A.N. Mikhaylov, D.G. Revin, D.M. Gaponova, S.V. Morozov, G.A. Kachurin, S.G. Yanovskaya. About the impurity effect in the SiO2:nc-Si system. Proceedings of Nanomeeting (May 20-23, 2003, Minsk, Belarus). P.37.
David I. Tetelbaum, Oleg N. Gorshkov, Alexandr P. Kasatkin, Vladimir A. Burdov, Sergey A. Trushin, Alexey N. Mikhaylov, Daria M. Gaponova. The Luminescent Properties of Ion-Implantation-Fabricated SiO2:nc-Si Nanostructures Annealed at High Temperatures. Proceeding of MRS 2005 Spring Meeting. 2003. V.777. T5.6.
Д.И. Тетельбаум, А.А. Ежевский, А.Н. Михайлов. Экстремальное поведение концентрации парамагнитных центров, обусловленных оборванными связями в Si, при ионном облучении, как свидетельство наноструктурирования. ФТП. 2003. Т. 37. В. 11. С. 1380-1382.